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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220 package www..com *Complement to type D45C Series *Very low collector saturation voltage *Fast switching APPLICATIONS *Designed for various specific and general purpose application *Shunt and switching regulators *Low and high frequency inverters converters and etc. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION D44C Series Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER D44C1,2,3 VCBO Collector-base voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 D44C1,2,3 VCEO Collector-emitter voltage D44C4,5,6 D44C7,8,9 D44C10,11,12 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 55 70 90 30 45 60 80 5 4 6 1 30 150 -55~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER D44C2,3,5,6,8,9,11,12 D44C1,4,7,10 CONDITIONS IC=1A ;IB=50mA MIN www..com D44C Series SYMBOL TYP. MAX UNIT VCEsat Collector-emitter saturation voltage 0.5 IC=1A ;IB=0.1A IC=1A ;IB=0.1A VCE=Rated VCES; VEB=5V; IC=0 40 IC=0.2A ; VCE=1V 100 25 IC=1A ; VCE=1V IC=2A ; VCE=1V IC=20mA;VCE=4V; f=1.0MHz 10 20 50 1.3 100 10 120 220 V VBEsat ICES IEBO Base-emitter saturation voltage Collector cut-off current Emitter cut-off current D44C3,6,9,12 V A A hFE-1 DC current gain D44C2,5,8,11 D44C1,4,7,10 D44C1,4,7,10 hFE-2 DC current gain D44C2,3,5,6,8,9,11,12 fT Transition frequency MHz Switching times tr ts tf Rise time Storage time Fall time IC=1.0A; VCC=20V IB1=-IB2=0.1A 0.3 0.7 0.4 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com D44C Series Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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